Diode D275-200, D275-200X

Diode D275-200, D275-200X
Diode D275-200, D275-200X

Diode D275-200, D275-200X

  • Type
    D275-200, D275-200X
  • The range of voltage class [V]
    2000-2600
  • TC [°C]
    139
  • V [V]
    0.80
Main parameters
D275-200_D275-200X.pdf pdf, 308.19 KB
Main features:
  • Flange design (terminals – round copper flange (base plate) and copper pipe)
  • Diodes of direct and reverse polarity
  • By means of special arrangement centrifugal forces are applied not to silicon chip but to case providing safe operation in large mechanical force conditions:

- long-term centrifugal accelerations up to 4900g and short-term up to 6800g, operated along an axis of symmetry toward the base plate

- long-term tangential accelerations 980g, operated perpendicular to the diode axis

  • Product name

    Diode D275-200, D275-200X
  • Type

    D275-200, D275-200X
  • The range of voltage class [V]

    2000-2600
  • TC [°C]

    139
  • V [V]

    0.80
  • rT [mΩ]

    0.74
  • Rth(j-c) [°C/W]

    0.09
  • Tjmax [°C]

    160
  • Case

    FD3
  • Product status

    New type
Application:
  • Brushless excitation systems of power electric machines
  • Nuclear and thermal plants
  • Oil-gas production and transport
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